? 2012 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c, r gs = 1m 800 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 49 a i dm t c = 25 c, pulse width limited by t jm 180 a i a t c = 25 c62a e as t c = 25 c5j dv/dt i s i dm , v dd v dss , t j 150 c 50 v/ns p d t c = 25 c 960 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms, t = 1minute 2500 v~ i isol 1ma, t = 1s 3000 v~ m d mounting torque for base plate 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 800 v v gs(th) v ds = v gs , i d = 8ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = 0.8 ? v dss , v gs = 0v 50 a t j = 125 c 4 ma r ds(on) v gs = 10v, i d = 31a, note 1 140 m hiperfet tm power mosfet q3-class IXFN62N80Q3 v dss = 800v i d25 = 49a r ds(on) 140m t rr 300ns ds100342a(04/12) n-channel enhancement mode fast intrinsic rectifier avalanche rated features z international standard package z low intrinsic gate resistance z minibloc with aluminum nitride isolation z avalanche rated z low package inductance z fast intrinsic rectifier z low r ds(on) and q g advantages z high power density z easy to mount z space savings applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z temperature and lighting controls minibloc e153432 g d s s g = gate d = drain s = source either source terminal s can be used as the source terminal or the kelvin source (gate return) terminal. preliminary technical information
IXFN62N80Q3 ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 31a, note 1 28 48 s c iss 13.6 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1260 pf c rss 100 pf r gi gate input resistance 0.13 t d(on) 54 ns t r 20 ns t d(off) 62 ns t f 11 ns q g(on) 270 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 31a 90 nc q gd 120 nc r thjc 0.13 c/w r thcs 0.05 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 62 a i sm repetitive, pulse width limited by t jm 250 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 1.6 c i rm 13.4 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 31a r g = 1 (external) i f = 31a, -di/dt = 100a/ s v r = 100v, v gs = 0v (m4 screws (4x) supplied) sot-227b (ixfn) outline preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2012 ixys corporation, all rights reserved IXFN62N80Q3 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 012345678 v ds - volts i d - amperes v gs = 10v 8 v 7 v 6 v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 8 v 9 v 6 v 7 v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 02468101214161820 v ds - volts i d - amperes 6 v 7v 5v v gs = 10v 8v fig. 4. r ds(on) normalized to i d = 31a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 62a i d = 31a fig. 5. r ds(on) normalized to i d = 31a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 20 40 60 80 100 120 140 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
IXFN62N80Q3 ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v gs - volts i d - amperes t j = 125oc - 40oc 25oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 102030405060708090100 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 180 200 0.20.40.60.81.01.21.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 q g - nanocoulombs v gs - volts v ds = 400v i d = 31a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1000 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1ms r ds(on) limit 250s
? 2012 ixys corporation, all rights reserved ixys ref: f_62n80q3(q9) 5-20-11 IXFN62N80Q3 fig. 13. maximum transient thermal impedance 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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